Measurements of SiO2, Polycrystalline Silicon, and Si3N4 Etching Yields Depending on Ion Incident Angle

Abstract

The ion incident angle dependences of the etching yields of SiO2, polycrystalline silicon (poly-Si), and Si3N4 were studied using a plasma beam irradiation apparatus. The angle dependences were affected not only by the etchant chemistry produced by Ar and/or fluorocarbon gas plasmas, but also by the incident ion energy. Since the incident etchant characteristics were measured, the results are useful for constructing an etching profile simulator.