Abstract
Pulsed-DC reactive sputtering was employed to make fully (0002)-textured AlN thin films with different full widths at half maximum (FWHMs) of (0002) rocking curve. The piezoelectric coefficient d33 was quantitatively measured by piezoresponse force microscopy (PFM). The obtained values were rationalized with the consideration of an enhancement factor due to the strongly localized electric field under the tip, indicating that this approach can be used reliably for d33 measurement. We found that d33 decreases with increasing FWHM. In addition, the piezoresponse amplitude is almost constant from grain to grain, except along the grain boundaries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
