Abstract
Accurate values of the nonlinear index of refraction n 2 for the nonlinear optical crystals ZnGeP2 and AgGaS2 were measured using the Z-scan technique. The results were obtained using ~100-fs mid-infrared pulses from an OPA-DFG system driven by the 800-nm laser. The measured values of the AGS agree well with the theoretical values based on the two-band model for a direct band gap material. We confirmed the validity of the measured values for the indirect semiconductor ZGP by comparing the results with those obtained at ~1300 nm in a previous study. We have proved the broadening due to GVD is negligible in our experiments. We believe these nonlinear measurements of AGS and ZGP are meaningful for the analysis and design of optical systems in the mid-infrared region.
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