Measurements of n-InGaAs with MBE layers: Relevance of negative magnetoresistance in the investigated samples

Abstract

Measurements of nH were performed. nH values showed a distinct increase at temperatures below ~90K (1.1μm n-InGaAs samples) and a decrease at temperatures below ~30K (7μm n-InGaAs samples), depending on the doping level. These trends might be related to the magnetoresistance (MR) of the n-InGaAs samples. The MR behavior of the n-InGaAs samples with respect to magnetic field and temperature was apparently dependent on the doping level. Two n-InGaAs samples, one of which had a thin InGaAs epilayer (1.1μm) and the other with a thicker (7μm) epilayer, showed interesting behavior at low temperature. Their behavior at magnetic fields of approximately −15000 to +15,000G were determined. The resistivity ((ρG – ρ0)/ρ0) of the 1.1μm sample was negative at temperatures lower than 30K.