Abstract
In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.
Highlights
Silicon (Si)-based photonic components have received more and more attention recently
Atomic layer deposition (ALD) is promising technology for advanced thin film deposition as it offers excellent control at the atomic scale over the thickness and uniformity of the film [20,21,22]. This allows the precise preparation of size- and distribution-controlled silicon nanocrystals
SiON films with different oxygen concentration were sequentially deposited on p-type (1−10 Ω·cm) and p-type (0.01−1 Ω·cm) single polished Si(100) wafers in a BENEQ TFS200 ALD system (BENEQ, Finland) at 300 ◦C
Summary
Silicon (Si)-based photonic components have received more and more attention recently. Their compatibility with conventional microelectronic device fabrication techniques and materials makes them attractive for potential applications in integrated optoelectronic technologies [1]. Because of the excellent quality of the silicon nitride matrix [13], this method can in principle enhance the luminescence properties and ensure the quantum confinement effect [17,18,19]. Atomic layer deposition (ALD) is promising technology for advanced thin film deposition as it offers excellent control at the atomic scale over the thickness and uniformity of the film [20,21,22] This allows the precise preparation of size- and distribution-controlled silicon nanocrystals. Electrical properties of these SiON film were analysed to evaluate the effect of oxygen on electrical breakdown strength of these films and other electrical properties
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