Abstract

Axial and planar blocking patterns in thin Si single crystals have been measured for the products of the reaction $^{28}\mathrm{Si}$(150 MeV)${+}^{28}$Si at ${\mathrm{\ensuremath{\theta}}}_{\mathit{L}}$=15\ifmmode^\circ\else\textdegree\fi{} and 12\ifmmode^\circ\else\textdegree\fi{}. Reaction times of the order ${10}^{\mathrm{\ensuremath{-}}18--}$${10}^{\mathrm{\ensuremath{-}}17}$ s have been observed for fusion-evaporation and fusion-fission processes.

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