Abstract
In modern extreme ultraviolet (EUV) lithography machines, sensitive optical components, such as multilayer mirrors and photomasks, may be affected by plasma interactions. The new 13.5 nm EUV-beam-line 2, designed to provide accelerated tests for next generation lithography, is used to investigate EUV-induced plasma phenomena. First systematic measurements of ion fluxes produced in EUV-induced hydrogen plasma are reported, with operating conditions including 5 and 20 Pa gas pressure, 3 kHz EUV pulse repetition rate, and 4.2 W total EUV beam power produced in a 10–15 ns EUV pulse. Space- and time-resolved distributions of ion fluxes and ion energies were measured using a retarding-field ion energy analyzer mounted next to the EUV beam. Typical ion energies were in the range of 1–8 eV and typical ion fluxes were in the range of 2–8 × 1017 ions m−2 s−1. The obtained ion fluxes are applied in a photomask lifetime test to understand the material effects after an EUV exposure.
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