Abstract
Hot electron magnetophonon resonances have been directly observed in GaAs/GaAlAs heterojunctions between 30 and 100K and their temperature and electric field dependences studied. The oscillation amplitude is seen to have a maximum at 60K, which is attributed to the influence of temperature dependent level broadening on the electron flow through energy space. The resonance positions indicate phonon frequencies close to the bulk TO value, as observed in normal magnetophonon resonances in heterojunctions, rather than the expected LO frequency. In samples of higher electron concentrations a second series of resonances is observed at low electric fields which we believe to be due to inter-subband scattering.
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