Abstract
Estimates of Fano factors have been made in the low-energy X-ray region for both silicon and germanium (109 eV to 5.9 keV for silicon and 183 eV to 5.9 keV for germanium). The measurements are based on observations on a large number of X-ray detectors taking into account the effects of incomplete charge collection. The values at an X-ray energy of 5.9 keV are 0.1161 ± 0.0001 and 0.1057 ± 0.0002, respectively, for silicon and germanium at cryogenic temperatures. The values are found to converge and increase to about 0.15 at 183 eV. Comparisons are made with theoretical predictions and the difficulties of making measurements in the 100 eV region are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
