Abstract
Scanning transmission electron microscopy (STEM) is a useful technique for the study of the morphology, composition, and electronic structure of quantum wells. However, most previous studies have been on epitaxially grown structures, before they had been used in devices. In this work we show that, with careful specimen preparation, advanced STEM techniques can be used to study a packaged commercially available light-emitting diode. The composition and morphology of both the quantum wells and the superlattices in this device have been determined and the electronic structure was measured with electron energy-loss spectroscopy.
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