Abstract
Representative results of measurements of some forty commercial MIS structures are presented. These specimens cover a fairly wide variety of structures such as Si–SiO2, Si–SiO2–Si3N4, Si–SiO2–P2O5 and Si–Si3N4. The surface-state density was measured by one of the two surface photovoltage methods. Results obtained by other methods are also shown for comparison. Fairly good agreement between these methods has been obtained. Effects of post-oxidation treatments on specimens are investigated and important relationships between some MIS process variables and surface properties are revealed and confirmed. Such information should be useful to manufacturers of MIS devices.
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