Measurements of CD and sidewall profile of EUV photomask structures using CD-AFM and tilting-AFM

Abstract

Accurate and traceable measurements of critical dimension (CD) and sidewall profile of extreme ultraviolet (EUV) photomask structures using atomic force microscopes (AFMs) are introduced in this paper. An instrument complementarily applied with two kinds of AFM techniques, the CD-AFM and the tilting-AFM, has been developed. High measurement stability of the instrument is demonstrated, for instance, the long-term CD stability is better than 1 nm over 500 successive measurements over 55 h. To traceably calibrate the effective tip geometry, transmission electron microscopes-based method is applied, which uses either the silicon crystal lattice or the structure pitch value calibrated by metrological AFMs as an internal scale. Several grating patterns with different nominal CDs and line/space ratios of an EUV photomask have been measured using the developed methods. A data evaluation method with considered higher order tip effect due to the non-vertical sidewall is introduced. Detailed measurement results of a test EUV photomask, such as middle CD, left and right sidewall angle, feature height, line edge roughness and edge profiles are given. Finally, the AFM results are compared to that of a PTB EUV scatterometer. The comparison of the middle CD yields a linear relation within a spread of only about ±2 nm and an offset of the absolute values below 3 nm. For the sidewall angle, both methods yield consistent results within a range of about 2°.