Measurements of aluminum diffusion in molten gallium and indium

Abstract

In this work diffusion of Al in liquid Ga and In was investigated using a shear-cell method. The diffusion coefficient D of Al in Ga was determined with a reproducibility between ±13% and ±5% over the temperature range 130–800°C. The diffusion data of Al in Ga are consistent with viscosity data of pure Ga, when compared via a Stokes–Sutherland–Einstein relation. The same relationship between diffusion data of the solute and the viscosity of the solvent holds for Al in In.