Abstract
Measurements of the non-ohmic behaviour associated with acoustoelectric amplification were employed to derive the frequency dependence of the small signal electronic gain parameter alpha 0 and the lattice attenuation alpha l in n-GaAs. Samples of different carrier concentrations at different temperatures were used to vary the frequency of the amplified flux. The use of a single frequency model in the derivation of alpha 0 and alpha 1 is justified in the text.
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Schedule a callMore From: Journal of physics. Condensed matter : an Institute of Physics journal
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