Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors

F Moscatelli,L Servoli,N Zorzi,G.-F Dalla Betta,M Boscardin,P Maccagnani,R Mendicino,G.M Bilei,A Morozzi,D Passeri

doi:10.1109/nssmic.2015.7581944

Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors

F Moscatelli, L Servoli + Show 8 more

Open Access

https://doi.org/10.1109/nssmic.2015.7581944

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Publication Date: Oct 1, 2015

Citations: 8

Affiliation: Institute for Microelectronics and Microsystems, INFN Sezione di Perugia, Fondazione Bruno Kessler, Trento Institute for Fundamental Physics and Applications, University of Trento, University of Perugia

#Surface Radiation Damage Effects #Bulk Radiation Damage + Show 8 more

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Abstract

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.

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