Abstract
This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances occurring in this model are described and factors influencing the measurement error of these methods are analysed. Some results illustrating thermal properties of the investigated devices including the IGBT and the antiparallel diode in the common case are shown and discussed. Computations illustrating the usefulness of the proposed compact thermal model are presented and compared to the results of measurements. It is proved that differences between internal temperature of both dies included in the TO-247 case can exceed even 15 K.
Highlights
Many electronic and power electronic circuits include Insulated Gate Bipolar Transistors (IGBTs) [1,2,3,4]
The first problem is the method of effective computations and measurements of internal temperatures of the IGBT and diode dies contained in the common case
The results of measurements of thermal parameters occurring in the thermal model and the measurements performed with the use of the considered thermo-sensitive parameters for a selected IGBT operating at different cooling conditions are compared
Summary
Many electronic and power electronic circuits include Insulated Gate Bipolar Transistors (IGBTs) [1,2,3,4] Properties of these devices strongly depend on their internal temperature Tj [5,6,7]. Many dies of the IGBT are mounted together with the die of an anti-parallel diode. In such a case, self-heating occurs in each of the mentioned dies and there are mutual thermal couplings between the two dies [13]. The area of the IGBT die is twice bigger than the area of the diode die The distance between these dies is equal to 2 mm. To take into account the influence of the device junction temperature on cooling efficiency, nonlinear thermal models should be used [18]
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