Abstract
Essential tools for S-parameter measurements such as VNAs, calibration kits, cables, adapters, bias tees, and their connectors are all sources of measurement uncertainties. From a circuit designer's point of view, the aimed parameters for a final product and actual results could be different due to measurement uncertainties during the device characterization. Uncertainty analysis of measurements can be used to improve circuit performance and increase yield. In this study, uncertainty sources of a measurement setup and uncertainties of RF power transistors of diverse technologies, such as GaN HEMT, GaAs FET, and LDMOS-FET, are presented. In addition, to analyze the effects of the measurement uncertainties on amplifier design, a power amplifier is designed and simulated with uncertainty added S-parameters.
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