Abstract
In view of a series of advantages of the resistometric technique there have been more and more reports applying this technique to conduct research in electromigration in different material thin films. However, to our knowledge, few papers have been published so far in which the resistometric technique itself has been discussed in detail so as to facilitate an application in the study of reliability in integrated circuits. This paper summed up our experience in using this technique to carry out research in the electromigration phenomena in thin aluminum films and reported our measured results of electromigration parameters. of this film. Comparing with other investigators 1, we found that our results were in agreement with the literature.
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