Abstract
The authors report results showing long minority carrier generation lifetime (> 30 µs) in Si and SiGe epitaxial layers grown by LPCVD. The measurements were conducted on MOS capacitors realised by plasma oxidation at temperatures below 150°C. Capacitance voltage measurements showed very low MOS interface state densities (< 3 × 1010eV-1cm-2). Oxide breakdown field strength was in excess of 8 MV/cm which together with the long lifetimes, demonstrate the high quality of the epitaxial layers and oxide.
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