Measurement of Urbach edge and midgap states in amorphous silicon p-i-n devices

Abstract

Abstract Urbach energy of valence band tails and mid-gap defect densities are important parameters for determining the performance of amorphous silicon (a-Si:H) devices. In this paper, we examine a technique which allows one to determine these parameters in device structures, as opposed to in films. The technique consists of measuring sub-gap quantum efficiency as a function of reverse bias and photon wavelength. We show that there is a distinction between the response of tail states and mid-gap states to the application of reverse bias, and that by analyzing these differences, one can locate the energies of the mid-gap states in the device. The technique gives an accurate measurement of Urbach edge of tail states, even on textured substrates, but only estimates mid-gap states within a factor of 2.