Abstract
The technique for investigation of thermoelectric, galvanomagnetic and thermomagnetic effects at ultrahigh pressure (up to 30 GPa) is presented. For micro-samples of chalcogens (Te,Se,S) and chalcogenides (n-PbTe,p-PbSe,p-PbS) the thermoelectric power, magnetoresistance and longitudinal and transverse Nernst-Ettingshausen effects have been measured. The systematical comparison of various effects in different materials are done. Effects obtained allowed to estimate the scattering parameter and mobility of charge carriers. It was shown the advantages of thermomagnetic technique over galvanomagnetic ones. Thus, from thermomagnetic effects the gapless state of materials was observed for the first time at room temperatures. The technique developed seems to be perspective for using in micro-device technology and thermosense industry. The work was supported by the Russian Foundation for Basic Research, Gr. No. 01-02-17203.
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