Abstract
The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2Si has been determined to be 23 × 10 −6 K −1. Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.
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