Abstract

Using 3. 5MeV α-particles backscattering, thermal diffusion of gold electrode into amorphous semiconductor thin films has been pointed out. A computer program for the deconvolution of the ex-perimental spectrum and a simplified numerical calculation allows depth profiling to be easily performed upon about 1600 A. Preliminary results are given showing different components in the diffusion process below the glass transition temperature; above this point a compound formation between gold and tellurium is discussed.

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