Abstract
Ballistic electron emission spectroscopy has been used to measure the electron transmittance function of both half- and quarter-electron-wavelength (using optics terminology) quantum-interference filters under zero applied voltage bias. At the design energy, these devices exhibit constructive and destructive interference, respectively. Second-derivative spectra from current versus voltage measurements clearly show both tunneling and above-barrier quasibound energy states. The spectra accurately reproduce the transmittance functions of the designed structures, attaining nearly the temperature-limited resolution at 77 K and 300 K. The presence of the above-barrier resonances has been confirmed conclusively by measurements on these complementary half- and quarter-wavelength device structures.
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