Measurement of the single event upset cross-section in the SVX IIe chip

Abstract

The Single Event Effect cross-section for the SVX IIe readout chip has been measured using 63.3 MeV protons from the UC Davis cyclotron. The expected rate of Single Event Upsets in the D Ø Silicon Microstrip Tracker, which uses the SVX IIe chip, is low enough for stable running. No Single Event Latchups were recorded. The chips withstood radiation doses of over 3 Mrad (3×10 4 Gy) , well over the dose expected for the anticipated exposure of the detector.