Abstract
The results of approbation of the method for measuring the temperature distribution profile over the surface of the LED chip are presented. The electroluminescence brightness of the heterostructure is used as a temperature-sensitive parameter. The method is based on measuring the brightness distribution of the LED heterostructure electroluminescence by a digital CMOS camera when it is supplied with a pulse current with a large pulse ratio and direct current, calculating the relative decrease in the brightness of the luminescence, and determining the overheating temperature of the local area of the heterostructure from the known temperature coefficient of the decrease in the luminescence brightness.
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