Abstract
The monovacancy formation enthalpy in copper, H1vF=(1.30+or-0.05) eV, has been measured using precision electrical resistometry on samples quenched from temperatures in the range 525-650 degrees C. Comparison of this value for H1vF with the activation enthalpy for self-diffusion via a monovacancy mechanism in copper, previously measured over the same temperature range, yields H1vM=0.77 eV for the enthalpy for monovacancy migration. This value compares well with the activation enthalpy for post-quench vacancy annealing, (0.76+or-0.04) eV, measured in the present work. The results are compared with those of previous investigations.
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