Abstract
A method for measuring the internal photoeffect quantum yield in various semiconductors is described. It is based on the fact that the dependence of the charge-carrier separation coefficient at a p-n junction on the wavelength of incident radiation in the proposed structure is constant in a wide range of short wavelengths. The results of measurements of the spectral sensitivity at two wavelengths, one of which is chosen in a region where the quantum yield is a priori equal to unity, is calculated for the second wavelength.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
