Abstract
Demonstration experimentale de la nature bimoleculaire de la formation des excitons a partir des porteurs libres dans une structure de double puits quantique asymetrique a effet tunnel, GaAs. Obtention d'un coefficient de formation bimoleculaire de 6×10 −12 cm 2 /PS. Determination simultanee des durees d'effet tunnel des electrons et des trous sous les memes conditions experimentales de l'echantillon. Utilisation de la technique de la correlation croisee de la photoluminescence pour mesurer ces durees de canalisation
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