Abstract
The anisotrpic resistivity of dislocations produced by deformation is measured in high-purity Al single crystals at liquid-helium temperature. A network of screw dislocations is produced by twisting a single-crystal cylindrical Al bar about the [111] direction which was along the axis of the bar. Resistivity parallel to the slip plane is measured by a mutual inductance method and along the crystal axis by a dc potentiometric method using Josephson junctions. Resistivities perpendicular to the specimen axis are found to be greater than those parallel to the specimen axis. The ratio Δρac/Δρdc (where Δρac and Δρdc are the resistivity increments along the directions perpendicular and parallel to specimen axis, respectively) is approximately equal to 1.29.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
