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Abstract
A method is described for determining the distribution coefficient of an impurity introduced into a semi-conductor by a fused metal contact. Coefficients for the segregation of antimony, arsenic, gallium, and aluminum from a silver contact to silicon at 1250°C are less than at the silicon melting point (1408°C). Gold-doped contacts to silicon yield similar values for the distribution coefficient of these impurities. This value is independent of the concentration of the impurity in the gold or silver alloy for small (less than 1%) percentages of the impurity. At 1250°C, the segregation of aluminum from a dilute solution of aluminum in silver is about the same as from 100% aluminum. The diffusivity of silicon atoms through a liquid zone containing aluminum and saturated with silicon is greater, at any particular temperature, than the diffusivity through a silver-silicon zone at the same temperature. However, these values approach each other at the silicon melting point.
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