Abstract
We present a novel method capable of measuring surface roughness of deposited thin films. The method was tested with 4 sets of SiN thin films deposited using a plasma-enhanced chemical vapor deposition system. The range of surface roughness measured over 3 sets of data with atomic force microscopy (AFM) was between 0.13 and 1.66nm. The remaining one data set had a greater roughness range of 1.63–5.43nm. The roughness calculated with an algorithm demonstrated a strong correlation with AFM measurement in all the comparisons. This was attributed to the formation of spatial height differences between positive light matter (particles) and negative surface plasmon carriers both comprising a speckle pattern. This indicates that the proposed method can effectively characterize surface roughness tendency with the accuracy comparable to AFM.
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