Abstract

Surface recombination velocity (SRV) on heavily zinc doped (>10/sup 18/ cm/sup -3/) n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of approximately 10/sup 5/ cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10/sup 6/ cm/sec. >

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