Measurement of surface recombination velocity on heavily doped indium phosphide

P Jenkins,M Ghalla-Goradia,S Bailey,M Faur

doi:10.1109/pvsc.1990.111655

Measurement of surface recombination velocity on heavily doped indium phosphide

P Jenkins, M Ghalla-Goradia + Show 2 more

https://doi.org/10.1109/pvsc.1990.111655

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Publication Date: May 21, 1990

Citations: 6

Affiliation: Cleveland State University, Glenn Research Center

#P-type InP #N-type InP + Show 8 more

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Abstract

Surface recombination velocity (SRV) on heavily zinc doped (>10/sup 18/ cm/sup -3/) n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of approximately 10/sup 5/ cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of >10/sup 6/ cm/sec. >

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