Abstract
Abstract For a successful realization of super-high efficiency solar cells, reduction of surface or interface recombination is required. Thus, it is important to know the value of the surface recombination velocity ( S ) for the optimization of the passivation technology and for the design of solar cells. In this paper, a photoluminescence (PL) based novel technique for the measurement of the value of S under sunlight is presented, and applied to variously passivated Si surfaces. S was found not to be constant but to depend strongly on the excitation intensity near and above 1 sun condition. The value of S is strongly reduced under concentrated sunlight indicating that concentration of sunlight or use of a thin film is effective for efficiency increase.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
