Abstract
A contactless nondestructive technique for measuring recombination parameters (surface recombination velocity and bulk and effective lifetime of free carriers) in Si wafers is proposed. The technique is based on the analysis of the relaxation kinetics of excess thermal emission of a wafer beyond the Si intrinsic absorption edge (λ > 3 μm) after excitation by a short laser pulse with a photon energy higher than the Si band gap. Experimental results for wafers 300 μm and 2 mm thick, excited by laser radiation with wavelengths of 0.96 and 1.06 μm at above-room temperatures are presented. The surface and bulk components of the effective lifetime are separated by extrapolating the final portion of the kinetics of excess thermal emission relaxation to the intersection with the y coordinate axis.
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