Abstract
The sputtering rates of single-crystal Si and polycrystalline Ag, Cu, Ni and Al were measured. The target materials were bombarded with oxygen ions accelerated at 10 kV. The sputtering rates of the target materials were a fifth of those obtained with an argon ion beam. The difference was larger than the difference between the masses of the oxygen and argon ions used for the incident beams. However, the sputtering rates with oxygen ions were related to the strenght of the bonds between the atams of the target material by the following expression, from analogy with an argon ion beam. Sr=4(I/D)(Ec/Mt)-1.4, where Sr is the sputtering rate, I is the current density of the incident ions, and D, Mt and Ec are the atomic density, mass number and cohesive energy of the target material, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
