Abstract
The authors report the spin diffusion length at 4.2K in sputtered Ni of lsfNi=21±2nm, and spin-dependent scattering parameters in Ni and at Ni∕Cu interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni “spoiler” layer into a Py/Cu/Py spin valve. Fits to data of AΔR vs Ni thickness using Valet-Fert theory [Phys. Rev. B 48, 7099 (1993)] show good agreement between fit parameters for both sample geometries.
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