Abstract

The authors report the spin diffusion length at 4.2K in sputtered Ni of lsfNi=21±2nm, and spin-dependent scattering parameters in Ni and at Ni∕Cu interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni “spoiler” layer into a Py/Cu/Py spin valve. Fits to data of AΔR vs Ni thickness using Valet-Fert theory [Phys. Rev. B 48, 7099 (1993)] show good agreement between fit parameters for both sample geometries.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.