Abstract
Si(100) surface crystallinity is measured to a depth of several nanometers using low energy ion scattering spectroscopy (LEISS). We used 2 keV He + ions as incident beams and neutral particles back-scattered at 180° were detected. The samples were controlled by Si molecular beam epitaxy (Si-MBE) combined with LEISS. The Si surface peak intensity in the 〈100〉 direction largely depends on the thickness of the amorphous Si layer and the degree of crystallization in layers only a few nanometers thick. This high level of structural sensitivity can be used for the analysis of surface damage induced by reactive ion etching (RIE).
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