Year-end Sale % OFF 
Abstract
The use of a focused ion beam equipment is reported to find out the in-plane residual stress value of a microelectromechanical system structure by performing a local stress release. The ion beam column is used to mill stress-release slots of a few microns, whereas the scanning electron column captures micrographs of the milled area before and after the stress release process. The displacement component perpendicular to the slot is obtained from digital image correlation analysis of the captured high-resolution micrographs. The fitting of the experimental results with an analytical model together with the independent determination of the Young’s modulus allows one to find the residual stress value of the layer under study to a very good accuracy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
