Measurement of Residual Stress in ZnO Thin Films Deposited on Silicon Wafers by the Indentation Fracture Test

Abstract

ABSTRCT:The indentation fracture test was used to evaluate residual stress in ZnO thin films deposited on silicon wafers. Using the calibrated constants involved in a simple semi-empirical formula, which was developed based on fracture analysis and experimental results, we estimated the residual stress in the ZnO thin films by measuring the indentation-induced crack length as a function of the indentation load.