Measurement of residual stress field anisotropy at indentations in silicon

Abstract

The residual stress field around spherical indentations on single-crystal silicon of different crystallographic orientations is mapped by Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific symmetry that can be related to the number and type of the active {111}〈 110 〉 slip systems. Residual compressive stress is concentrated in lobes oriented along the projection onto the indented plane of the activated slip plane normal and tensile stress regions are arranged alternating with the compressive stress lobes.