Abstract
The curves of the minority carrier lifetime versus current are measured in InGaAsP-InP double heterostructure LEDs. To analyze the measured data the carrier recombination rate versus the minority carrier concentration n are calculated. Radiative and Auger recombination processes are considered to explain the measured data on heterointerfaces and/or on recombination centers. The radiative recombination rate R/sub rad/ versus n curves are confirmed to be parabolic. A simple analytical formula for the radiative recombination rate coefficient B(n) is derived. >
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