Abstract

The ozone-sensitive properties of two types of semiconductor NiO gas sensors having different widths of the active layer are investigated. Their calibration characteristics for ozone concentrations of 0-300 ppb and different temperature ranges are obtained. Sensors with a thin NiO layer showed good operating capability for ozone concentrations of up to tens of ppm. The results of parallel operation of the sensors as the active elements of a model of an ozone meter and a series analyzer of ozone confirmed the possibility of using them in ozone-measuring apparatus.

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