Abstract
This paper presents a class of methods to determine net dopant concentration of silicon wafers by means of dynamic or quasi-steady-state photoluminescence. In contrast to resistivity measurements, this approach is independent of assumptions about dopant type and majority carrier mobility. The latter fact makes it particularly interesting for the determination of net dopant concentration in compensated silicon, where conventional mobility models involving only one dopant species have been reported to fail. Our approach also allows access to majority carrier mobility via combination of net dopant concentration as inferred from photoluminescence with a resistivity measurement.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
