Abstract
A new time-of-flight (ToF) method is proposed for the study of transport properties in low-dimensional systems. By analyzing the photoluminescence intensity correlation curves under external fields, the drift velocity of excess carriers in quasi-1-dimensional (1D) quantum wells is determined. The drift velocity in a p-type doped GaAs/AlGaAs quasi-1D structure is determined in various electric fields, and the electron mobility is estimated as 4800 cm2/V·s at 300 K, which is in agreement with that in a conventional two-dimensional electron gas (2DEG) structure.
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