Abstract
We present an experimental technique for determining the excess minority carrier lifetime within the base region of p-n junction solar cells. The procedure is to forward-bias the solar cell with a flash from a stroboscope and then to monitor the decay of the open-circuit voltage. Results are given for conventional horizontal-junction devices, as well as for vertical single- and multijunction solar cells. Lifetimes obtained with this technique are compared with those obtained from a method based on open-circuit voltage decay following the abrupt termination of a forward current, and with results obtained from a traveling light spot measurement of base minority carrier diffusion length in vertical-junction solar cells, from which the lifetime can be inferred. It is found that the forward current method does not yield a reliable lifetime estimate.
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