Abstract
A method of measuring minority carrier lifetime and injection ratios of contacts on transistor materials is described. The lifetime is obtained by observing the decay of resistance of a filament throughout the duration of an injecting pulse. The use of a bridge circuit, incorporating a resistance-capacitance network which is electrically analogous to the filament, enables the lifetime to be read off a calibrated dial. The range of lifetime, which can be measured with the equipment in its present form, extends down to 1 μsec, the accuracy being usually about 5%. The method is also capable of determining minority carrier mobilities. Examples of measurements of lifetime and injection ratio of soldered contacts in n-type germanium are given. The injection ratio is found to rise linearly with the current through the contact
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