Abstract
A method for determination of diffusion lengths in the range 0.5-50 µm, which corresponds to carrier lifetimes in the nanosecond range, is suggested A calibrated nonequilibrium charge is injected into the base of the reverse-biased diode structure. The injection is provided by alpha particles generated by natural decay in the single-particle counting mode. The nuclear spectrometry technique is used to measure the amount of charge that diffused across the base to the boundary of the electric-field region. The loss of charge during the diffusion is calculated as a function of the depth of alpha particle penetration beyond the electric-field region. The derived power-law functions make it possible to relate the diffusion length with the exponent and numerical factor that describes the loss of charge. The experiment is performed with lightly doped 4H-SiC epitaxial films. © 2005 Pleiades Publishing, Inc.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
