Abstract
Rare-earth transition metal amorphous thin films which have uniaxial magnetic anisotropy perpendicular to the film plane were prepared by rf-sputtering or thermal evaporation. It was found that these amorphous magnetic films have a large extraordinary Hall effect. We measured the surface potential distribution for various domain patterns in the films. The correlation between the surface potential distribution and the shape of domain pattern was observed. We also measured the relation between the Hall voltage and the position of straight domain wall. From this measurement, we confirmed that the geometry of the element (the ratio of the length L to the width W) affects the positional dependence of Hall voltage, and the sensitive region in the film with respect to the Hall electrodes. We measured the domain wall velocity in Gd-Co amorphous films. Indicial response of the straight domain wall in these films to the pulse magnetic field was obtained.
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