Measurement of Linewidth for Nano-scale Lines Prepared by Multilayer Thin Films

Abstract

One-dimensional lines with nanometer scale are prepared by using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth has been measured by analyzing top-down scanning electron microscope (SEM) images on-line and the linewidth measured is less than 20 nm. In addition, off-line analysis of these images based on image processing technique is performed to measure linewidth accurately. The edges of nanometer lines are detected by image processing and analysis technique. A nano-scale linewidth measurement method based on image processing and analysis technique was put forward.